iss035e006283 (3/18/2013) --- Photo documentation of the Hicari (Growth of Homogeneous Silicon-Germanium [SiGe] Crystals in Microgravity by the Traveling Liquidous Zone [TLZ] Method) Experiment Sample Cartridge (SC) following its removal from the Kobairo Rack during Expedition 35. The materials science investigation Growth of Homogeneous SiGe Crystals in Microgravity by the TLZ Method (Hicari) aims to verify the crystal-growth by Travelling Liquidous Zone method, and to produce high-quality crystals of Silicon-Germanium (SiGe) semiconductor using the Japanese Experiment Module-Gradient Heating Furnace (JEM-GHF).
Photographer Tom Marshburn
Date March 18, 2013