jsc2025e015685c(3/6/2025) --- The GaN devices wire bonded to a chip carrier as part of the High Performance Radiation Hardened GaN High Electron Mobility Transistors for Space Applications (Radiation Harden GaN) investigation which studies how radiation affects a type of transistor used in the semiconductor industry. Researchers measure the performance of the devices before, during, and after flight to determine whether performance degrades. This could help determine how well the transistors can tolerate radiation in space. Image courtesy of Department of Electrical and Computer Engineering, University of Delaware.
Date September 20, 2023